Samsung has begun mass production of a new embedded storage memory solution that will bring the kind of read/write speeds I expect from high-end laptops to… high-end smartphones.
The new Samsung 512GB eUFS 3.1 offers sequential read speeds up to 2,100 MB/s and sequential write speeds up to 1,200 MB/s.
While the top sequential read speeds remain unsurprisingly unchanged from last year’s eUFS 3.0 storage, the new storage offers up to 3 times faster sequential write speeds. It also has a 1.6x boost in random read performance and a slight bump in random write performance.
Samsung says its new eUFS 3.1 storage is 10X faster than a typical UHS-I microSD card and twice as fast as a SATA SSD — although it’s worth noting that there are PCIe NVMe SSDs that definitely outperform Samsung’s new embedded storage.
Of course, it still makes more sense to compare smartphones-to-smartphones, so here’s a table looking at how the new product stacks up against Samsung’s embedded storage from the past 5+ years:
|Product||Sequential Read||Sequential Write||Random Read||Random Write|
|512GB eUFS 3.1|
|2100MB/s||1200MB/s||100,000 IOPS||70,000 IOPS|
|512GB eUFS 3.0|
|2100MB/s||410MB/s||63,000 IOPS||68,000 IOPS|
|1TB eUFS 2.1|
|1000MB/s||260MB/s||58,000 IOPS||50,000 IOPS|
|512GB eUFS 2.1|
|860MB/s||255MB/s||42,000 IOPS||40,000 IOPS|
|Automotive UFS 2.1|
|850MB/s||150MB/s||45,000 IOPS||32,000 IOPS|
|256GB UFS Card|
|530MB/s||170MB/s||40,000 IOPS||35,000 IOPS|
|256GB eUFS 2.0|
|850MB/s||260MB/s||45,000 IOPS||40,000 IOPS|
|128GB eUFS 2.0|
|350MB/s||150MB/s||19,000 IOPS||14,000 IOPS|
|eMMC 5.1||250MB/s||125MB/s||11,000 IOPS||13,000 IOPS|
|eMMC 5.0||250MB/s||90MB/s||7,000 IOPS||13,000 IOPS|
|eMMC 4.5||140MB/s||50MB/s||7,000 IOPS||2,000 IOPS|
While Samsung says mass production of its 512GB embedded UFS 3.1 memory is already underway, the company will also offer 128GB and 256GB versions later this year.